in this paper, the effect of rough interface is investigated on spin dependent transmission in a magnetic tunneling junction. For calculating of transmission probability the transfer matrix technique and the approximation of effective mass is used in calculations.  The mentioned magnetic structure includes of two semiconductor ferromagnetic separated by a nonmagnetic layer which is attached to two metal nonmagnetic electrodes. The different components of spin dependent  transmission probability (direct and indirect)   in the presence of roughness is studied while the roughness is distributed as random islands in interfaces. The results of calculations show that roughness  affects the transport of incident electrons through mentioned double barrier structure, effectively. Because the scattering due to roughness of interface and therefore opening addition conduction  channels, results to reduce the peak of incident electrons transmission probability. Also, the effect of percent of interface roughness is studied on component of indirect  transmission probability. 

Keywords: Tunneling, Spin-dependent transport, random Interface roughness, Ferromagnetic semiconductor (FMS

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